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| a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units bv cbo i c = 10 ma 45 bv cer i c = 5.0 ma r be = 10 ? 45 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 35 v 1.0 ma h fe v ce = 5.0 v i c = 100 ma 30 300 --- p g p in c v cc = 35 v p out = 2.0 w f = 1025 to 1150 mhz pulse width = 10 s duty cycle = 1.0% 9.0 0.25 35 db w % npn silicon rf power transistor MSC80614 description: the asi MSC80614 is designed for class c, dme/tacan applications up to 1150 mhz. features include: ? omnigold tm metalization system ? input matching network ? emitter ballasting maximum ratings i c 250 ma v cc 37 v p diss 10 w @ t c 100 c t j -65 c to +200 c t stg -65 c to +150 c jc 10 c/w package style .280 2l flg 1 = collector 2 = base 3 = emitter 1 2 3
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